The LM5111 is a dual 5A compound gate driver from TI. It integrates MOS and bipolar transistors and can independently drive two N-channel MOSFETs. The device has a 5A sink/3A source current capability and can be operated in parallel to double the drive current capability. Additionally, it features TTL-compatible independent inputs, fast propagation times (typical 25ns), fast rise and fall times (14ns/12ns rise/fall, load 2nF), supply rail under-voltage lockout protection (UVLO), LM5111-4 UVLO configured to drive PFET through OUT_A and NFET through OUT_B and pin compatibility with industry standard gate drivers.
The LM5111 is a dual gate driver that combines MOS and bipolar transistors to deliver high peak output currents with low variation across voltage and temperature. It offers independent control of two N‑Channel MOSFETs, 5 A sink and 3 A source capability, and can be paralleled to double drive current.
The device is supplied in SOIC‑8 and thermally enhanced MSOP8‑EP packages and includes under‑voltage lockout protection, fast propagation (≈25 ns), and configurable output polarity for a range of power‑management applications.
| Peak Sink Current | 5 A |
|---|---|
| Peak Source Current | 3 A |
| Propagation Delay (typical) | 25 ns |
| Rise Time | 14 ns |
| Fall Time | 12 ns |
| Supply Voltage Range | 3.5 V – 14 V |
| Package Options | SOIC‑8, Thermally Enhanced MSOP8‑EP |
The LM5111 can sink up to 5 A of peak current.
It is offered in SOIC‑8 and thermally enhanced MSOP8‑EP packages.
Typical propagation delay is about 25 ns.