IXTH 20N60 / IXTM 20N60 is a N-channel enhancement mode power MOSFET from IXYS. It features international standard packages, low RDS(on), HDMOSTM process, rugged polysilicon gate cell structure, low package inductance (<5nH), easy to drive and to protect, fast switching times. Applications include switch-mode and resonant-mode power supplies, motor control, Uninterruptible Power Supplies (UPS) and DC choppers.
This datasheet provides the electrical specifications, maximum ratings and package information for the IXYS IXTH 20N60 and IXTM 20N60 N‑channel MOSFETs. It includes typical performance curves, thermal data and mechanical dimensions for both the TO‑247 (IXTH) and TO‑204 (IXTM) packages.
Key sections cover maximum voltage and current ratings, on‑resistance, gate charge, capacitances, and thermal resistance values, as well as application notes for switch‑mode power supplies, motor control and UPS systems.
| Maximum Drain‑Source Voltage (VDSS) | 600 V |
|---|---|
| Continuous Drain Current (ID) | 20 A |
| Typical On‑Resistance (RDS(on)) | 0.35 Ω |
| Input Capacitance (Ciss) | 4500 pF |
| Output Capacitance (Coss) | 420 pF |
| Thermal Resistance Junction‑to‑Case (RthJC) | 0.42 K/W |
| Package Weight (TO‑247) | 6 g |
The MOSFETs are rated for a maximum drain‑source voltage of 600 V.
The typical on‑resistance is 0.35 Ω.
The device can handle a continuous drain current of 20 A.