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intel 28F128J3A 28F640J3A 28F320J3A (x8/x16) 3 Volt Intel StrataFlash Memory Preliminary Datasheet
This document is a preliminary datasheet for Intel's 28F128J3A, 28F640J3A, and 28F320J3A (x8/x16) StrataFlash memory devices. These products utilize a high-density symmetrically-blocked architecture with erase blocks of 128 Kbytes in densities ranging from 32 Mbit to 128 Mbit.
Read onlineIntel X16 specifications
| Vcc Operation Range | 2.7 V-3.6 V |
|---|---|
| Read Access Time (32 M) | 110/25 ns |
| Total Min. Erase Cycles (128 Mbit) | 12.8M |
| Effective Programming Time | 6 us per Byte |
Source: intel 28F128J3A 28F640J3A 28F320J3A (x8/x16) 3 Volt Intel StrataFlash Memory Preliminary Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the technology generation of this memory?
The devices utilize Intel's 0.25 micron ETOX™ VI process technology.
From: intel 28F128J3A 28F640J3A 28F320J3A (x8/x16) 3 Volt Intel StrataFlash Memory Preliminary Datasheet
What voltage range is required for the 28F128J3A, 28F640J3A, and 28F320J3A memory devices?
These devices operate with a Vcc voltage between 2.7 V and 3.6 V.
From: intel 28F128J3A 28F640J3A 28F320J3A (x8/x16) 3 Volt Intel StrataFlash Memory Preliminary Datasheet
What I/O voltage options does the device support?
The device supports either 1.65 V–2.5 V or 2.7 V–3.6 V I/O voltage options.
From: intel 28F800C3 28F160C3 28F320C3 28F640C3 (x16) k Flash Memory (C3) Datasheet
How many block erase cycles can the flash memory endure?
The flash memory is rated for a minimum of 100,000 block erase cycles.
From: intel 28F800C3 28F160C3 28F320C3 28F640C3 (x16) k Flash Memory (C3) Datasheet