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intel 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O SRAM (W30) 28F6408W30 28F3204W30 28F320W30 28F640W30 Data sheet
This document is a preliminary datasheet for the 1.8 Volt Intel® Wireless Flash Memory with 3 Volt I/O and SRAM (W30). It covers four specific models: 28F6408W30, 28F3204W30, 28F320W30, and 28F640W30. The device combines state-of-the-art Flash technology with low power SRAM to provide a versatile memory solution for high performance, low power applications.
The datasheet details the product features, including multiple 4-Mbit partitions, dual operation modes (Read-While-Write or Read-While-Erase), and enhanced factory programming capabilities. It provides comprehensive information on package diagrams, signal descriptions, block diagrams, flash memory maps, bus operations, command definitions, read/write modes, security features, protection registers, power considerations, and electrical specifications.
Intel W30 specifications
| Initial Access Speed | 70 ns |
|---|---|
| Page-Mode Read Speed | 25 ns |
| Burst-Mode Read Speed | 20 ns |
| Program Time per Word | 3.5 us |
| Standby Current (typ.) | 6 pA |
| Read Current | 7 mA |
| Operating Temperature Range | -25 °C to +85 °C |
| Minimum Erase Cycles | 100K |
All Intel W30 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the program time per word for this memory?
The enhanced factory programming mode offers a program time of 3.5 us per word.
What is the typical standby current?
The typical standby current for this device is 6 pA.