Intel W30 Manuals

intel 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O SRAM (W30) 28F6408W30 28F3204W30 28F320W30 28F640W30 Data sheet

The document describes the features of the 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O, which combines state-of-the-art Intel Flash technology with low power SRAM. It offers a multi-partition, dual-operation flash architecture that allows reading from one partition while programming or erasing in another partition. This Read-While-Write or Read-While-Erase capability enables higher data throughput rates compared to single partition devices and allows interleaving code execution. The memory also includes Enhanced Factory Programming (EFP) mode to improve programming performance and eliminate manufacturing bottlenecks. It also features block lock-down and programmable WAIT signal.