Key facts
- Brand
- Intel
- Model
- P30
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-12
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Intel StrataFlash P30 1-Gbit Family Datasheet
Datasheet 102 pages · 1.1 MB · EN
This document provides comprehensive information about the Intel StrataFlash Embedded Memory (P30) 1-Gbit family, which utilizes two-bit-per-cell storage technology. The devices are offered in densities ranging from 64-Mbit to 1-Gbit and are manufactured using Intel 130 nm ETOX VIII process technology. Key features include high-performance synchronous-burst read modes, fast asynchronous access times, and low power consumption.
Read onlineIntel P30 specifications
| Density | 64-Mbit up through 1-Gbit |
|---|---|
| Technology | Two-bit-per-cell |
| Process | 130 nm ETOX VIII |
| VCC Voltage | 1.7 V – 2.0 V |
| VCCQ Voltage | 1.7 V – 3.6 V |
| Operating Temperature | -40 °C to +85 °C |
| Erase Cycles | 100,000 |
| Data Bus Width | 16-bit |
All Intel P30 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the voltage range for the core supply?
The VCC (core) voltage range is 1.7 V to 2.0 V.
What is the minimum number of erase cycles per block?
The device supports a minimum of 100,000 erase cycles per block.
What is the operating temperature range?
The device operates from 40 °C to +85 °C.
What voltage ranges are supported for core and I/O pins?
Core voltage (VCC) is 1.7‑2.0 V and I/O voltage (VIO) is 1.7‑3.6 V.