Intel StrataFlash® Embedded Memory (P30) 1-Gbit P30 Family Datasheet introduces the features of Intel StrataFlash® Embedded Memory (P30) products, including high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, etc.
This document provides comprehensive information about the Intel StrataFlash Embedded Memory (P30) 1-Gbit family, which utilizes two-bit-per-cell storage technology. The devices are offered in densities ranging from 64-Mbit to 1-Gbit and are manufactured using Intel 130 nm ETOX VIII process technology. Key features include high-performance synchronous-burst read modes, fast asynchronous access times, and low power consumption.
| Density | 64-Mbit up through 1-Gbit |
|---|---|
| Technology | Two-bit-per-cell |
| Process | 130 nm ETOX VIII |
| VCC Voltage | 1.7 V – 2.0 V |
| VCCQ Voltage | 1.7 V – 3.6 V |
| Operating Temperature | -40 °C to +85 °C |
| Erase Cycles | 100,000 |
| Data Bus Width | 16-bit |
The VCC (core) voltage range is 1.7 V to 2.0 V.
The device supports a minimum of 100,000 erase cycles per block.
The P30 product family is manufactured using Intel 130 nm ETOX VIII process technology.