This document describes the application, features, and characteristics of 2SJ130(L), 2SJ130(S) silicon P-channel MOS FET. It is suitable for high-speed power switching, switching regulators, DC-DC converters, and ultrasonic power oscillators.
This document provides technical specifications for the Hitachi 2SJ130(L) and 2SJ130(S) Silicon P-Channel MOS FETs. These devices are designed for high-speed power switching applications, including switching regulators, DC-DC converters, and ultrasonic power oscillators.
The absolute maximum rating for the channel temperature is 150 °C.
The minimum gate to source cutoff voltage is -2.0 V.