Hitachi 2SJ130(L) 2SJ130(S) Silicon P-Channel MOS FET Datasheet

2SJ130(L) and 2SJ130(S) are high voltage and high power switching tubes, using silicon P-channel MOSFET, with low on-resistance, high switching speed, low drive current, no secondary breakdown, etc. It is suitable for switching regulators, DC-DC converters and ultrasonic power oscillators.


Hitachi 2SJ130(L) 2SJ130(S) Silicon P-Channel MOS FET Datasheet - cover page
Brand
Hitachi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
50 KB
Published
07 June, 2012
Updated
30 September, 2023
Model
2SJ130
MD5 checksum
EE46746ED68702D8BBFF7D33F02F8B88

About this manual

This document provides technical specifications for the Hitachi 2SJ130(L) and 2SJ130(S) Silicon P-Channel MOS FETs. These devices are designed for high-speed power switching applications such as switching regulators, DC-DC converters, and ultrasonic power oscillators.

What's inside

  • Application
  • Features
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Safe Operating Area
  • Thermal Impedance

Frequently asked questions

What is the maximum channel temperature for this MOS FET?

The absolute maximum channel temperature is rated at 150 °C.

What is the maximum drain current rating?

The device has a maximum drain current of -1 A.

Is this component suitable for use in medical applications?

No, Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without written consent.

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