Hitachi 2SC1213/2SC1213A Silicon NPN Transistor Datasheet

2SC1213, 2SC1213A are NPN type transistors, mainly used for low frequency amplifiers.


Hitachi 2SC1213/2SC1213A Silicon NPN Transistor Datasheet - cover page
Brand
Hitachi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
25 KB
Published
07 June, 2012
Updated
30 September, 2023
MD5 checksum
8E668CFE3EECC96949ECB87CD3882224

About this manual

This document provides technical specifications for the Hitachi 2SC1213 and 2SC1213A, which are Silicon NPN Epitaxial transistors. The device is designed for low-frequency amplifier applications or as a complementary pair with the 2SA673 series.

What's inside

  • Application
  • Outline
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Maximum Collector Dissipation Curve
  • Typical Output Characteristics

Specifications

Junction temperature150 °C

Frequently asked questions

What is the maximum collector current for this transistor?

The maximum collector current is rated at 500 mA.

What are the absolute maximum ratings for collector to emitter voltage?

The maximum collector to emitter voltage is 35 V for the standard model and 50 V for the A variant.

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