This document describes the features and characteristics of the 2SA1194(K) silicon PNP epitaxial high gain amplifier.
The 2SA1194(K) is a silicon PNP epitaxial transistor supplied in a TO‑126 package. It is intended for high‑gain amplifier applications and includes detailed electrical parameters.
The document lists absolute maximum ratings, typical DC current transfer ratios, switching times, and cautions regarding usage limits, storage conditions, and non‑radiation‑resistant design.
| Collector‑to‑base voltage (Vcbo) | 60 V |
|---|---|
| Collector‑to‑emitter voltage (Vceo) | -60 V |
| Emitter‑to‑base voltage (Vebo) | 7 V |
| Collector current (Ic) | -1 A |
| Collector peak current (Icp) | -2 A |
| Power dissipation (Pd) | 1 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| DC current transfer ratio (hFE) typical | 1000 |
| Turn‑on time (ton) | 0.7 µs |
| Turn‑off time (toff) | 0.8 µs |
| Base‑to‑emitter saturation voltage (Vbe(sat)) | 2.0 V |
| Collector‑to‑emitter saturation voltage (Vce(sat)) | -2.0 V |
The maximum collector current is -1 A.
The device should be stored between –55 °C and +150 °C.
No, the product is not designed to be radiation resistant.
The typical DC current transfer ratio is 1000.