This document describes the features and characteristics of the 2SA1193(K) Silicon PNP Epitaxial Darlington Application High Gain Amplifier.
The 2SA1193(K) is a silicon PNP Darlington transistor from Hitachi, intended for high‑gain amplifier applications. The document provides the device’s absolute maximum ratings, electrical characteristics, and typical performance curves.
Key specifications include a collector‑to‑emitter voltage of –60 V, a collector current rating of –0.5 A (peak –1.0 A), a power dissipation of 0.9 W, and a typical DC current gain of 2000. Safe operating area curves and switching time data are also presented.
| Collector‑to‑base voltage (Vcbo) | -60 V |
|---|---|
| Collector‑to‑emitter voltage (Vceo) | -60 V |
| Emitter‑to‑base voltage (Vebo) | 7 V |
| Maximum collector current (Ic) | -0.5 A |
| Peak collector current (Icp) | -1.0 A |
| Power dissipation (Pc) | 0.9 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range (Tstg) | -55 to +150 °C |
| DC current transfer ratio (hFE) | 2000 |
The device is rated for a collector‑to‑emitter voltage of –60 V.
The typical DC current transfer ratio is 2000.
The transistor can be stored from –55 °C up to +150 °C.
No, it is not authorized for medical use without written consent from Hitachi.