2SA1193(K) is a silicon PNP-type NPN transistor produced by Hitachi. It features high gain and is suitable for high gain amplifiers.
The 2SA1193(K) is a silicon PNP Darlington transistor intended for high‑gain amplifier applications. It features a high current gain and is packaged for use in a variety of circuit designs.
The document lists absolute maximum ratings, electrical characteristics, and typical curves such as collector‑to‑emitter saturation voltage and switching time versus collector current. Legal and usage notes, including restrictions on medical applications, are also included.
| Collector‑to‑base voltage (V_CBO) | -60 V |
|---|---|
| Collector‑to‑emitter voltage (V_CEO) | -60 V |
| Emitter‑to‑base voltage (V_EBO) | 7 V |
| Collector current (I_C) | -0.5 A |
| Collector peak current (I_C peak) | -1.0 A |
| Collector power dissipation (P_C) | 0.9 W |
| Junction temperature (T_J) | 150 °C |
| Storage temperature (T_stg) | -55 to +150 °C |
| Turn‑on time (t_on) | 0.3 µs |
| Turn‑off time (t_off) | 0.9 µs |
| Base‑to‑emitter saturation voltage (V_BE(sat)) | -2.0 V |
The maximum collector‑to‑base voltage is –60 V.
The turn‑on time is specified as 0.3 µs.
No, Hitachi’s products are not authorized for use in medical applications without written consent.