2SA1190, 2SA1191 are silicon PNP epitaxial transistors suitable for low frequency low noise amplifiers, and they are complementary pairs with 2SC2855 and 2SC2856.
The 2SA1190 and 2SA1191 are silicon PNP epitaxial transistors intended for low‑frequency, low‑noise amplifier applications and can be used as a complementary pair with the 2SC2855/2SC2856 series. The document lists their pinout (Emitter, Collector, Base) and outlines key electrical parameters.
Typical specifications include collector‑to‑base and collector‑to‑emitter breakdown voltages, maximum collector current, power dissipation, junction temperature limits, gain‑bandwidth product, and noise figures. Graphs of typical output and transfer characteristics are provided, along with notes on usage and medical‑application restrictions.
| Collector‑to‑base voltage (Vcbo) | -90 V (2SA1190) / -120 V (2SA1191) |
|---|---|
| Emitter‑to‑base voltage (Vebo) | -5 V |
| Maximum collector current (Ic) | 100 mA |
| Maximum power dissipation (Pd) | 400 mW |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Gain‑bandwidth product (fT) | 130 MHz |
| Noise figure (NF) | 0.15 dB |
The maximum collector current is 100 mA.
The collector‑to‑base voltage is –90 V for the 2SA1190 and –120 V for the 2SA1191.
No, Hitachi’s products are not authorized for medical applications without written consent from Hitachi.
The gain‑bandwidth product (fT) is 130 MHz.