2SA1190, 2SA1191 are silicon PNP epitaxial transistors suitable for low frequency low noise amplifiers, and can be used as complementary pairs with 2SC2855 and 2SC2856.
The 2SA1190 and 2SA1191 are silicon PNP epitaxial transistors intended for low‑frequency low‑noise amplifier applications and as complementary pairs with 2SC2855/2SC2856. Their package is a TO‑92 style device.
The document provides absolute maximum ratings, detailed electrical characteristics, typical output and transfer curves, noise performance, and cautions regarding usage, warranty and intellectual‑property considerations.
| Collector‑to‑Base Voltage (Vcbo) | -90 V (2SA1190) / -120 V (2SA1191) |
|---|---|
| Collector‑to‑Emitter Voltage (Vceo) | -90 V (2SA1190) / -120 V (2SA1191) |
| Emitter‑to‑Base Voltage (Vebo) | -5 V |
| Maximum Collector Current (Ic) | 100 mA |
| Maximum Power Dissipation (Pd) | 400 mW |
| Maximum Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Gain‑Bandwidth Product (fT) | 130 MHz |
| Noise Figure (NF) | 0.15 dB at 1 kHz |
They are intended for low‑frequency low‑noise amplifiers and can be used as a complementary pair with 2SC2855 and 2SC2856.
The 2SA1190 is rated for -90 V and the 2SA1191 for -120 V.
Hitachi states the product is not radiation‑resistant, specifications may change without notice, and users must stay within the guaranteed rating ranges.