2SA1188, 2SA1189 are silicon PNP type transistors, which are used for low frequency amplifiers and are complementary to 2SC2853 and 2SC2854.
This datasheet provides the electrical specifications and absolute maximum ratings for the Hitachi 2SA1188 and 2SA1189 silicon PNP epitaxial transistors, which are intended for low‑frequency amplifier applications and can be used as complementary pairs with 2SC2853/2SC2854. The document includes characteristic curves, power‑dissipation limits, and recommended operating conditions.
Key specifications such as collector‑to‑base voltage, collector power dissipation, junction temperature, and gain‑bandwidth product are listed, along with package details (TO‑92) and cautions regarding usage limits, non‑radiation‑resistance, and intellectual‑property considerations.
| Collector to base voltage (VCBO) | -90 V (2SA1188), -120 V (2SA1189) |
|---|---|
| Collector to emitter voltage (VCEO) | -90 V (2SA1188), -120 V (2SA1189) |
| Emitter to base voltage (VEBO) | -5 V (both devices) |
| Collector current (IC) | 100 mA (both devices) |
| Junction temperature (Tj) | 150 °C |
| Maximum collector power dissipation (PC) | 400 mW |
The 2SA1188 is rated for –90 V and the 2SA1189 for –120 V collector‑to‑base voltage.
No, the product is not designed to be radiation resistant.