Hitachi 2SA1188 and 2SA1189 Silicon PNP Transistor Datasheet

2SA1188 and 2SA1189 are silicon PNP transistors, used in low frequency amplifiers, as complementary pairs with 2SC2853 and 2SC2854.


Hitachi 2SA1188 and 2SA1189 Silicon PNP Transistor Datasheet - cover page
Brand
Hitachi
Category
Transistor
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
19 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
B7A9E6B0AD1A0F70FC284E595E529765

About this manual

The 2SA1188 and 2SA1189 are silicon PNP epitaxial transistors offered by Hitachi. They are intended for low‑frequency amplifier applications and can be used as complementary pairs with the 2SC2853 and 2SC2854 transistors.

The document lists absolute maximum ratings, electrical characteristics such as collector‑base and collector‑emitter breakdown voltages, current limits, power dissipation, and gain bandwidth. It also includes a maximum collector dissipation curve and legal usage notes.

What's inside

  • Application
  • Outline
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Notes
  • Maximum Collector Dissipation Curve
  • Legal Disclaimer

Specifications

Junction temperature (T_J)150 °C (both devices)
Storage temperature range (T_stg)-55 °C to +150 °C (both devices)

Frequently asked questions

What applications are the 2SA1188 and 2SA1189 suitable for?

They are intended for low‑frequency amplifiers and can be used as complementary pairs with 2SC2853 and 2SC2854.

What is the storage temperature range for these transistors?

The storage temperature range is –55 °C to +150 °C.

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