2SA1083, 2SA1084, and 2SA1085 are silicon PNP epitaxial transistors suitable for low frequency low noise amplifiers and complementary pairing with 2SC2545, 2SC2546, and 2SC2547.
This document provides the specifications and characteristic curves for Hitachi silicon PNP epitaxial transistors 2SA1083, 2SA1084, and 2SA1085. The transistors are intended for low‑frequency low‑noise amplifier applications and can be used as complementary pairs with 2SC2545, 2SC2546, and 2SC2547.
Key data include absolute maximum ratings such as collector‑to‑base voltage, collector‑to‑emitter voltage, and collector current, as well as detailed electrical parameters like gain‑bandwidth product, noise voltage, and output capacitance. Legal notices and usage restrictions, especially for medical applications, are also included.
| Collector‑to‑base voltage (Vcbo) | -60 V (2SA1083) |
|---|---|
| Collector‑to‑emitter voltage (Vceo) | -60 V (2SA1083) |
| Collector current (Ic) | 100 mA |
| Junction temperature (Tj) | 150 °C |
| Gain‑bandwidth product (fT) | 9 MHz |
They are intended to be used as a complementary pair with 2SC2545, 2SC2546 and 2SC2547.
The maximum collector current is 100 mA.
Yes, they are specified for low‑frequency low‑noise amplifier applications.
No, they are not authorized for medical applications without written consent from Hitachi.