2SA1083, 2SA1084, 2SA1085 are silicon PNP epitaxial transistors suitable for low frequency low noise amplifiers. They are complementary pairs with 2SC2545, 2SC2546, and 2SC2547.
The Hitachi 2SA1083, 2SA1084, and 2SA1085 are silicon PNP epitaxial transistors packaged in TO‑92. They are intended for low‑frequency, low‑noise amplifier applications and are often used as complementary pairs with Hitachi 2SC2545‑2547 devices.
The document provides absolute maximum ratings, electrical characteristics, typical output curves, and cautions for proper use. It also includes mechanical dimensions, package code, and contact information for Hitachi Semiconductor.
| Collector‑to‑Base Voltage (V CBO) | -60 V (2SA1083), -90 V (2SA1084), -120 V (2SA1085) |
|---|---|
| Collector‑to‑Emitter Voltage (V CEO) | -60 V (2SA1083), -90 V (2SA1084), -120 V (2SA1085) |
| Emitter‑to‑Base Voltage (V EBO) | -5 V (all models) |
| Collector Current (I C) | 100 mA (all models) |
| Emitter Current (I E) | 100 mA (all models) |
| Collector Power Dissipation (P C) | 400 mW (all models) |
| Maximum Junction Temperature (T J) | 150 °C (all models) |
| Storage Temperature Range | -55 °C to +150 °C (all models) |
| Gain‑Bandwidth Product (f T) | 9 MHz (all models) |
The 2SA1084 can withstand up to –90 V between collector and base.
They can be stored from –55 °C up to +150 °C.
The gain‑bandwidth product is 9 MHz.
Each device can dissipate up to 400 mW.