The 2SA1029 and 2SA1030 are silicon PNP epitaxial transistors offered by Hitachi. They are intended for low‑frequency amplifier applications and can be used as complementary pairs with devices such as the 2SC458 and 2SC2308.
The datasheet lists absolute maximum ratings, detailed electrical characteristics, and the TO‑92 package outline. It also includes cautions regarding usage limits, non‑radiation‑resistant design, and contact information for Hitachi semiconductor support.
| Collector‑to‑base voltage (V_CBO) max | -30 V (2SA1029) / -55 V (2SA1030) |
|---|---|
| Collector‑to‑emitter voltage (V_CEO) max | -30 V (2SA1029) / -50 V (2SA1030) |
| Collector current (I_C) max | 100 mA |
| Power dissipation (P_D) max | 300 mW |
| Maximum junction temperature (Tj) | 150 °C |
| Package type | TO‑92 |
They are intended for low‑frequency amplifier circuits and can be used as complementary pairs with 2SC458 and 2SC2308.
The maximum collector‑to‑base voltage for the 2SA1030 is 55 V.
No, the product is not designed to be radiation resistant.