2SA1029 and 2SA1030 are silicon PNP epitaxial transistors suitable for low frequency amplifiers. They are complementary pairs with 2SC458 and 2SC2308. The features and characteristics include: collector to base voltage ranging from -30V to -55V, collector to emitter voltage ranging from -30V to -50V, emitter to base voltage of -5V, collector current of -100mA, emitter current of 100mA, collector power dissipation of 300mW, and maximum operating temperature of 150°C.
The 2SA1029 and 2SA1030 are silicon PNP epitaxial transistors offered by Hitachi. They are intended for low‑frequency amplifier applications and are often used as complementary pairs with 2SC458 and 2SC2308.
The document provides absolute maximum ratings, detailed electrical characteristics, characteristic curves, and mechanical dimensions for the TO‑92 (1) package. Key specifications include collector‑to‑base voltage, collector‑to‑emitter voltage, current limits, power dissipation, and gain‑bandwidth product.
| Junction temperature (Tj) | 150 °C (both devices) |
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They are suited for low‑frequency amplifier circuits and can be used as complementary pairs with 2SC458 and 2SC2308.
Yes, Hitachi notes that the product is not radiation‑resistant, that it may be subject to change without notice, and that users should stay within the guaranteed rating ranges.