FQAF12P20 is a 200V P-Channel MOSFET with low on-state resistance, superior switching performance and high energy pulse withstand capability, suitable for high efficiency switching DC/DC converters.
The FQAF12P20 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for high‑efficiency DC/DC converters.
Key specifications include a -200 V drain‑source rating, -8.6 A continuous drain current at 25 °C, low gate charge (typical 31 nC), and a thermal resistance of 1.79 °C·W (junction‑to‑case). The device is supplied in a TO‑3PF package and includes detailed test circuit diagrams for gate charge, resistive switching, and diode recovery characteristics.
| Drain‑Source Voltage (V_DSS) | -200 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -8.6 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Total Gate Charge (Q_g) | 31 nC (typical) |
| Power Dissipation (P_D) at 25 °C | 70 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 1.79 °C·W |
| Package Type | TO-3PF |
The device is rated for a maximum drain‑source voltage of -200 V.
It can conduct up to -8.6 A continuously at a junction temperature of 25 °C.
The typical total gate charge is 31 nC.
The MOSFET is supplied in a TO‑3PF package.