FQAF12P20 is a 200V P-channel MOSFET with low on-state resistance, low gate charge and low Crss. It is well suited for high efficiency switching DC/DC converters.
The FQAF12P20 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching DC/DC converters and offers low gate charge, low output capacitance, and robust avalanche capability.
Key features include a continuous drain current of -8.6 A at 25 °C, pulsed current rating of -34.4 A, on‑resistance as low as 0.47 Ω (Vgs = 10 V), and a total gate charge of 31‑40 nC. Thermal resistance is 1.79 °C·W (junction‑to‑case) with a power dissipation rating of 70 W.
| Drain‑Source Voltage | -200 V |
|---|---|
| Continuous Drain Current (25 °C) | -8.6 A |
| Pulsed Drain Current | -34.4 A |
| Gate‑Source Voltage | +30 V |
| Reverse Transfer Capacitance (Crss) | 30‑40 pF |
| Power Dissipation (25 °C) | 70 W |
| Thermal Resistance, Junction‑to‑Case | 1.79 °C·W |
| Thermal Resistance, Junction‑to‑Ambient | 40 °C·W |
The device is rated for a drain‑source voltage of -200 V.
The MOSFET can dissipate up to 70 W at a junction temperature of 25 °C.