This document introduces the features of FCH25N60N N-Channel MOSFET, such as RDS(on), Qg, EAS, IAR, EAR, dv/dt, and PD.
This document is a technical datasheet for the Fairchild Semiconductor FCH25N60N, an N-Channel MOSFET utilizing SupreMOS technology. It features a 600V drain-to-source voltage rating and a continuous drain current of 25A at 25°C. The device is designed for AC-DC SMPS applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power.
| Drain to Source Voltage (Vdss) | 600 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 25 A |
| Pulsed Drain Current | 75 A |
| Power Dissipation (Tc = 25°C) | 216 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 0.58 °C/W |
| Package Type | TO-247 |
The maximum continuous drain current at a case temperature of 25°C is 25 A.
This device uses SupreMOS technology, which employs a deep trench filling process for superior switching performance and ruggedness.
Yes, the FCH25N60N is RoHS Compliant.