Industrial

This document describes the operation and features of the FAN7601. This device is a BCDMOS programmable frequency current mode PWM controller which is designed for off-line adapter applications and auxiliary power supplies. To reduce power loss at light and no load, the FAN7601 operates in burst mode and it includes a start-up switch to reduce the losses in the start-up circuit. Because of the internal start-up switch and burst mode operation, it is possible to supply an output power of 0.5W with under 1W input power when the input line voltage is 265V. On no load condition, input power is under 0.3W. The FAN7601 offers a latch protection pin for the protection of the system e.g. over voltage protection and/or thermal shutdown. The internal over voltage protection function shuts down the IC operation when the supply voltage reaches 19V. In addition, a soft start function is provided, and the soft start time can be varied.

Application Note AN6012 Design of Power Factor Correction Circuit Using FAN7528

This application note describes the design guidelines of a 75W universal-input, single-stage power factor correction (PFC) for LED lighting applications. It utilizes a flyback converter topology controlled by the critical conduction mode control IC, FAN7530, and incorporates several functions such as CV/CC mode feedback circuits, cycle-by-cycle current limit, soft-starting function, etc., specifically for LED lighting applications.

This document introduces FAN6208, which is a synchronous rectification controller for isolated LLC or LC resonant converters that can drive two individual SR MOSFETs emulating the behavior of rectifier diodes. FAN6208 measures the SR conduction time of each switching cycle by monitoring the drain-to-source voltage of the SR MOSFETs.

The BUZ11 is a 30A, 50V, 0.040 Ohm N-channel power MOSFET manufactured by Fairchild Semiconductor Corporation. It has nanosecond switching speeds, linear transfer characteristics, high input impedance and majority carrier device features.

BSS138W is a N-channel logic level enhancement mode field effect transistor. This product has an extremely low RDS(ON), rugged and reliable, and fast switching performance. It is particularly suitable for low voltage, low current applications such as small servo motor control.

BSS138K is an N-channel logic level enhancement mode field effect transistor with features such as low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, etc. It is packaged in an ultra-small surface mount package and is Pb Free/RoHS compliant. It has a green compound and strong ESD protection.

This document describes the features and characteristics of Fairchild's BSS138 N-Channel enhancement mode field effect transistor. These transistors are produced using Fairchild's proprietary DMOS technology, which has high cell density to minimize on-state resistance and provide rugged, reliable, and fast switching performance. They are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

This document describes the features and characteristics of the BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor produced by Fairchild Semiconductor Corporation. These products are made using Fairchild's proprietary high cell density DMOS technology, which aims to minimize on-state resistance and provide rugged, reliable, and fast switching performance. These products are particularly suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

BS270 is a N-channel enhancement mode field effect transistor produced by Fairchild with a rated current of 400mA and a rated voltage of 60V.

2N7002W is an N-channel enhancement mode field effect transistor manufactured by Fairchild Semiconductor. The transistor features low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, and ultra-small surface mount package. It is RoHS compliant.

2N7002V/VA is a N-channel enhancement mode field effect transistor. It has low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage and other features.

2N7002T is an N-channel enhancement mode field-effect transistor. It features low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage and ultra-small surface mount package.

The 2N7002MTF is a N-Channel Small Signal MOSFET with a maximum on-state resistance of 5.0 ohms, a rated voltage of 60V and a rated current of 200mA. It features lower RDS(on), improved inductive ruggedness, fast switching times, lower input capacitance, extended safe operating area and improved high temperature reliability.