FCH35N60 is a N-channel MOSFET from FAIRCHILD, features low on-resistance, low gate charge, low output capacitance, 100% avalanche tested.
This document is a technical datasheet for the Fairchild Semiconductor FCH35N60 SuperFET, an N-channel MOSFET designed for high-voltage applications. The device features a proprietary advanced charge balance mechanism to achieve outstanding low on-resistance and lower gate charge performance.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as 600V drain-to-source voltage and 35A continuous drain current at 25°C. It details thermal resistance values, capacitance parameters, switching times, and body diode specifications. The document also includes typical performance curves for on-resistance, breakdown voltage, gate charge, and safe operating areas.
| Drain to Source Voltage (Vdss) | 600 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 35 A |
| Total Gate Charge at 10V (Typ.) | 139 nC |
| Operating and Storage Temperature Range | -55 to +150 °C |
The operating and storage temperature range is from -55 to +150 °C.