This is a FCB36N60N N-channel MOSFET from Fairchild, with a rated voltage of 600V and a rated current of 36A. Its features include: RDS(on) = 81mΩ (Typ.) @ VGS = 10V, ID = 18A; ultra low gate charge (Typ. Qg = 86nC); low effective output capacitance; 100% avalanche tested; RoHS compliant.
This document is a datasheet for the Fairchild Semiconductor FCB36N60N, a SupreMOS N-Channel MOSFET designed for high voltage applications. It features a 600V drain-to-source voltage rating and 36A continuous drain current. The device utilizes a deep trench filling process to provide superior switching performance and ruggedness, making it suitable for AC-DC SMPS, server/telecom power, and industrial applications.
| Drain to Source Voltage | 600 V |
|---|---|
| Operating Temperature Range | -55 to +150 °C |
The device is available in a D²PAK package.
Yes, the datasheet states the device is RoHS compliant.
The single pulsed avalanche energy is 1800 mJ.