FCH22N60N is a high voltage super-junction MOSFET from Fairchild Semiconductor, which has low on-resistance, ultra low gate charge and high avalanche capability.
This document is a technical datasheet for the Fairchild Semiconductor FCH22N60N, an N-channel SupreMOS MOSFET. The device utilizes deep trench filling technology to provide superior switching performance and ruggedness suitable for AC-DC SMPS applications such as PFC, server/telecom power, and industrial power supplies.
The datasheet provides comprehensive electrical characteristics including maximum ratings, off-state parameters, on-resistance, dynamic capacitance, and switching times. It also includes typical performance curves for on-region characteristics, transfer characteristics, thermal response, and safe operating areas.
| Drain to Source Voltage (V_DSS) | 600 V |
|---|---|
| Continuous Drain Current (I_D) | 22 A |
| Power Dissipation (T_J = 25°C) | 205 W |
| Operating and Storage Temperature Range | -55 to +150 °C |