FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ is a MOSFET product launched by Fairchild Semiconductor Corporation. This product uses deep trench filling process and features RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A, ultra low gate charge (Typ.Qg = 17.8nC) and low effective output capacitance. It meets RoHS standards.
This document is a datasheet for the Fairchild Semiconductor FCD9N60NTM, an N-Channel MOSFET utilizing SupreMOS technology. It is designed for high voltage super-junction applications including AC-DC SMPS, PFC, server/telecom power, and industrial power supplies. The device features a deep trench filling process for superior switching performance and ruggedness.
| Drain to Source Voltage | 600 V |
|---|---|
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | D-PAK (TO-252) |
| Total Gate Charge | 17.8 nC |
The operating and storage temperature range is from -55 to +150 °C.