SuperFETTM is Fairchild's proprietary, new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This document is a datasheet for the Fairchild Semiconductor FCH47N60_F133 SuperFET, a high voltage MOSFET designed for AC/DC power conversion in switching mode operation. The device features a proprietary charge balance mechanism for low on-resistance and ultra-low gate charge, suitable for system miniaturization and higher efficiency applications.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical performance characteristics including on-region, transfer, and capacitance curves. It also includes test circuit diagrams for gate charge, resistive switching, and unclamped inductive switching, along with mechanical dimensions for the TO-247 package.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 47 A |
| Typical On-Resistance | 0.0580 Ohm |
| Typical Gate Charge | 210 nC |
| Effective Output Capacitance | 420 pF |
| Package Type | TO-247 |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Case | 0.3 °C/W |
The typical on-resistance is 0.0580 Ohms.
The maximum continuous drain current at 25°C is 47 Amperes.
The typical gate charge is 210 nanocoulombs.