Industrial

2N7002KW is an N-channel enhancement mode field effect transistor with features such as low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, etc. The product is packaged in an ultra-small surface mount package and is Pb free/RoHS compliant.

2N7002K is a N-channel enhancement mode field-effect transistor from Fairchild Semiconductor Corporation, which has low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, and ultra-small surface mount package.

2N7002DW is a dual N-channel enhancement mode field effect transistor, featuring low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, etc. It is packaged in an ultra-small surface mount package and is lead-free/ROHS compliant.

The document describes the features and characteristics of the 2N7000BU/2N7000TA product, including fast switching times, improved inductive ruggedness, lower input capacitance, extended safe operating area, and improved high temperature reliability.

Fairchild Semiconductor offers a wide range of automotive power products including IGBTs, MOSFETs, motor drivers, power converters, etc., which meet the requirements of automotive power systems, motor drives, power distribution, and electronic control systems.

This document is the characteristics parameters of the SML-210 series LEDs, including electrical, optical characteristics, package size, polarity, package material, working temperature, storage temperature and other information.

The 2N3416 / 2N3417 NPN General Purpose Amplifier is a bipolar junction transistor (BJT) with a maximum rated voltage of 50 V and a maximum rated current of 500 mA. It is suitable for general purpose amplifiers and switches requiring collector currents up to 300 mA.

G6S PCB Relay is a surface mounted DPDT relay from Panasonic. It features long terminals, space-saving inside-L terminal, high dielectric strength, high impulse withstand voltages, low power consumption, bifurcated crossbar contact, fully sealed construction, high reliability, IRS application, high sealability, ultra-miniature, through-hole terminal and EN60950/EN41003 supplementary insulation-certified type.

FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT is a NPT Trench Technology, Positive temperature coefficient power transistor from Fairchild Semiconductor Corporation. The product has low saturation voltage, low switching loss and extremely enhanced avalanche capability, which makes it suitable for applications such as induction heating and microwave oven.

2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 are NPN General Purpose Amplifiers produced by Fairchild Semiconductor Corporation. This device supports a maximum collector current of 500mA, a maximum collector-emitter voltage of 25V and a maximum collector-base voltage of 25V.

This document describes the features and characteristics of the FGL40N120AND 1200V NPT IGBT product from Fairchild Semiconductor Corporation, including high speed switching, low saturation voltage, and high input impedance. The product is suitable for applications such as induction heating, UPS, AC & DC motor controls, and general purpose inverters.

The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMA series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable Surmetic� package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.