FCD4N60 600V N-Channel MOSFET is a new generation of high voltage MOSFET from Fairchild, with low on-resistance and low gate charge.
This document is a technical datasheet for the Fairchild Semiconductor FCD4N60, a 600V N-Channel MOSFET utilizing the proprietary SuperFET technology. The device features ultra-low gate charge and low effective output capacitance, making it suitable for AC/DC power conversion in switching mode operations.
The datasheet provides comprehensive data including absolute maximum ratings, electrical characteristics such as breakdown voltage and on-resistance, dynamic parameters like turn-on/off times, and typical performance curves. It also includes mechanical dimensions for the D-PAK package.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 3.9 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Total Gate Charge (Typical) | 12.8 nC |
| Effective Output Capacitance (Typical) | 32 pF |
The device operates and can be stored in a temperature range from -55 to +150 °C.