FCB20N60F is a 600V N-CHANNEL FRFET produced by Fairchild Semiconductor Corporation. Its main features are the extremely low on-resistance Rds(on)=0.15�, the fast recovery time trr = 160ns, the low output capacitance Coss.eff=165pF, and the 100% avalanche tested.
This document is a technical datasheet for the Fairchild Semiconductor FCB20N60F, a 600V N-channel SuperFET™. The device features low on-resistance (typ. Rds(on)=0.15Ω), fast recovery characteristics with a typical reverse recovery time of 160ns, and is RoHS compliant.
The datasheet provides absolute maximum ratings, electrical characteristics including off-state breakdown voltage and on-state resistance, dynamic capacitance values, switching parameters, and thermal resistance data for various mounting conditions.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 20 A |
| Typical On-Resistance | 0.15 Ω |
| Reverse Recovery Time (typ) | 160 ns |
| Total Gate Charge (typ) | 75 nC |
| Effective Output Capacitance (typ) | 165 pF |
| Thermal Resistance, Junction-to-Case | 0.6 °C/W |
Yes, the device is RoHS Compliant.
The operating and storage temperature range is -55 to +150 °C.
The device uses an FCB20N60FTM D2-Pak package.