FCH76N60N is a 600V N-Channel MOSFET from Fairchild Semiconductor Corporation. It employs a deep trench filling process and features 600V of maximum voltage, 36mΩ of on-resistance, 100% avalanche testing, and RoHS compliance.
This document is a technical datasheet for the Fairchild Semiconductor FCH76N60N, an N-channel SupreMOS power MOSFET. The device utilizes deep trench filling technology to achieve superior on-resistance (Rds(on)) and switching performance suitable for AC-DC SMPS applications such as PFC, server/telecom power, and industrial power supplies.
| Continuous Drain Current (Tc = 25°C) | 76 A |
|---|---|
| Package Type | TO-247 |
| Total Gate Charge (Typical) | 218 nC |
The component can operate and be stored within a temperature range of -55 to +150 °C.