The document describes the features and characteristics of the FCB11N60 600V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 650V voltage, 0.32Ω RDS(on), 40nC ultra-low gate charge, and 95pF low effective output capacitance.
This document is a technical datasheet for the Fairchild Semiconductor FCB11N60, a 600V N-Channel MOSFET utilizing the proprietary SuperFET technology. It highlights features such as ultra-low gate charge, low effective output capacitance, and RoHS compliance.
| Drain-Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 11 A |
| Pulsed Drain Current | 33 A |
| Gate-Source Voltage | +/- 30 V |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | D2-PAK |
The operating and storage temperature range is from -55 to +150 °C.