FCH47N60NF is a 600V N-Channel MOSFET from Fairchild Semiconductor Corporation. It has RDS(on) = 57.5mΩ (Typ.) @ VGS = 10V, ID = 23.5A, Ultra Low Gate Charge (Typ. Qg = 121nC), Low Effective Output Capacitance, 100% Avalanche Tested, RoHS Compliant
This document is a technical datasheet for the Fairchild Semiconductor SupreMOS™ MOSFET model FCH47N60NF. It describes an N-Channel MOSFET with FRFET technology rated at 600V and 47A, designed for AC-DC SMPS applications including PFC, server/telecom power, and industrial power supplies.
The datasheet provides comprehensive electrical characteristics, typical performance curves, switching specifications, and mechanical dimensions. Key features include ultra-low gate charge (Typ. Qg = 121nC), low effective output capacitance, and 100% avalanche testing.
| Drain to Source Voltage | 600 V |
|---|---|
| Gate to Source Voltage | +30 V |
| Continuous Drain Current (25°C) | 45.8 A |
| Package Type | TO-247 |
| Thermal Resistance (Junction to Case) | 0.34 °C/W |
The device supports a maximum continuous drain current of 45.8 A when the case temperature is 25°C.
The MOSFET has a maximum power dissipation of 368 W when the case temperature is 25°C.