This document describes the features and characteristics of the FCB20N60 600V N-Channel MOSFET product from Fairchild Semiconductor Corporation, including 650V drain-source voltage, 0.15Ω on-resistance, low gate charge, and low output capacitance.
The document is a technical datasheet for the Fairchild Semiconductor FCB20N60, a 600V N-Channel MOSFET utilizing the company's proprietary SuperFET technology. It highlights features such as ultra-low on-resistance (typical 0.15Ω), low gate charge, and suitability for AC/DC power conversion applications. This manual is written in Chinese.
| Drain-Source Voltage | 600 V |
|---|---|
| Typical On-Resistance | 0.15 Ω |
| Typical Gate Charge | 75 nC |
| Typical Output Capacitance | 165 pF |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Ambient | 62.5 °C/W |
The device has a maximum drain-source voltage rating of 600 V.
The maximum operating junction temperature is 150 °C.