This document describes the features and characteristics of Fairchild Semiconductor Corporation's UniFET TM FDA18N50 500V N-Channel MOSFET, including 19A current, 500V voltage, low charge and capacitance, fast switching speed, etc.
This document is a technical datasheet for the Fairchild Semiconductor FDA18N50, an N-Channel enhancement mode power MOSFET. The device utilizes the proprietary UniFET™ planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
The FDA18N50 is rated for a drain-source voltage of 500V and a continuous drain current of 19A at 25°C. It features low gate charge (typical 45 nC) and improved dv/dt capability, making it suitable for high-efficiency switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (25°C) | 19 A |
| Continuous Drain Current (100°C) | 11.4 A |
| Pulsed Drain Current | 76 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 945 mJ |
| Power Dissipation (Tc = 25°C) | 239 W |
| Operating Temperature Range | -55 to +150 °C |
The device uses Fairchild's proprietary planar stripe DMOS technology.
Yes, all units are 100% avalanche tested.