FDA24N50 N-Channel MOSFET is a high-performance MOSFET produced by Fairchild. It features low resistance, low gate charge, low Crss, fast switching, 100% avalanche testing, and is well suited for high-efficiency power supply and active power factor correction applications.
This document is a technical datasheet for the Fairchild Semiconductor FDA24N50, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance for high-efficiency applications such as switch-mode power supplies and active power factor correction.
The datasheet provides comprehensive electrical characteristics, including maximum ratings for voltage (500V) and current (24A continuous), thermal specifications, and dynamic parameters like gate charge and capacitance. It also includes typical performance curves illustrating on-resistance variation with temperature and drain current, as well as the maximum safe operating area.
| Drain to Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 24 A |
| Package Type | TO-3PN |
| Total Gate Charge (Typ.) | 65 nC |
| Operating Temperature Range | -55 to +150 °C |
The MOSFET can operate and be stored within a temperature range of -55 to +150 °C.
The device can withstand a single pulsed avalanche energy of 1872 mJ.