FDA20N50F N-Channel MOSFET is a high performance N-channel enhancement mode power field effect transistor manufactured by Fairchild. The device features low on-state resistance, low gate charge, fast switching speed, 100% avalanche tested and is well suited for high efficient switched mode power supplies and active power factor correction applications.
This document is a datasheet for the Fairchild Semiconductor FDA20N50F, an N-Channel enhancement mode power field effect transistor. The device utilizes the manufacturer's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for high-efficiency switched mode power supplies and active power factor correction applications.
| Drain to Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 22 A |
| Package Type | TO-3PN |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 0.44 °C/W |
The device has a maximum drain-to-source voltage rating of 500 V.
The operating and storage temperature range is from -55 to +150 °C.