FDA59N25 is a 250V N-channel MOSFET produced by Fairchild. It has a maximum current of 59A, a RDS(on) of 0.049Ω, a gate charge of 63nC and a Crss of 70pF. It is well suited for high efficiency switched mode power supplies and active power factor correction.
The document describes the Fairchild Semiconductor FDA59N25, an N-Channel enhancement mode power field effect transistor manufactured using proprietary planar stripe DMOS technology. Key features include a drain-source voltage rating of 250V, a continuous drain current of 59A at 25°C, and low on-state resistance (RDS(on)) of 0.049Ω @ VGS = 10V.
| Continuous Drain Current at 25°C | 59 A |
|---|---|
| Static Drain-Source On-Resistance | 0.049 Ω @ VGS = 10V |
| Operating and Storage Temperature Range | -55 to +150 °C |
The device operates between -55°C and +150°C, with a maximum lead soldering temperature of 300°C.
The static drain-source on-resistance is typically 0.049 Ω at a gate-source voltage of 10 V.