This document describes the features and characteristics of Fairchild Semiconductor Corporation's UniFET TM FDA24N50F N-Channel MOSFET, including a drain-to-source voltage of 500V, a drain current of 24A, and an on-state resistance of 0.2Ω.
This document is a technical datasheet for the Fairchild Semiconductor FDA24N50F, an N-channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance. It is well-suited for high-efficiency switching mode power supplies and active power factor correction applications.
| Drain to Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) | 24 A |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Case) | 0.46 °C/W |
The device can operate and be stored in a temperature range from -55 to +150 °C.