This document describes the FDA38N30 N-Channel MOSFET produced by Fairchild Semiconductor Corporation. The features include a drain-to-source voltage of 300V, a drain current of 38A, an on-state resistance of 0.085Ω, low gate charge, fast switching, 100% avalanche tested, improved dv/dt capability, and RoHS compliance. The product is suitable for high-efficiency switched mode power supplies and active power factor correction.
This document is a technical datasheet for the Fairchild Semiconductor FDA38N30, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
The datasheet provides maximum ratings, electrical characteristics, typical performance curves, test circuit diagrams, and mechanical dimensions for the TO-3PN package.
| Drain to Source Voltage | 300 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 38 A |
| Total Gate Charge (Typ.) | 60 nC |
| Reverse Transfer Capacitance (Typ.) | 60 pF |
The device has a maximum drain-to-source voltage rating of 300 V.
The operating and storage temperature range is from -55°C to +150°C.