FDD16AN08A0 is a N-channel super trench MOSFET from Fairchild Semiconductor Corporation. It features Rds(on) of 13mOhm(typ.), Vgs of 10V, ID of 50A, Qg(tot) of 31nC(typ.), Vgs of 10V, low Miller charge, low Qrr body diode, UIS capability (single pulse and repetitive pulse), qualified AEC Q101, formerly developmental type 82660. Applications include 42V automotive load control, starter/alternator systems, electronic power steering systems, electronic valve train systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, 24V and 48V systems primary switch.
This document is a datasheet for the Fairchild Semiconductor FDD16AN08A0 N-Channel UltraFET Trench MOSFET. The device is rated for 75V drain-to-source voltage and 50A continuous current with a typical on-resistance of 13mOhm. It is designed for automotive applications such as load control, starter/alternator systems, and electronic power steering, as well as DC-DC converters and off-line UPS systems. The product is qualified to AEC Q101 standards.
| Drain to Source Voltage | 75 V |
|---|---|
| Gate to Source Voltage | 420 V |
| Continuous Drain Current | 50 A |
| On Resistance | 13 mOhm |
| Total Gate Charge | 31 nC |
| Package Type | TO-252AA |
| Operating Temperature | -55 to 175 C |
Yes, the product is qualified to AEC Q101 standards.
The typical on-resistance is 13mOhm at Vgs = 10V and Id = 50A.