FDD10N20LZ is a N-Channel MOSFET produced by Fairchild company. It has a maximum voltage of 200V and a maximum current of 7.6A. This product has the characteristics of low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche testing, improved dv/dt capability and RoHS compliance.
This document is a technical datasheet for the Fairchild Semiconductor FDD10N20LZ, an N-channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance suitable for high-efficiency switching mode power supplies.
| Drain to Source Voltage | 200 V |
|---|---|
| Gate to Source Voltage | +/- 20 V |
| Continuous Drain Current (Tj=25°C) | 7.6 A |
| Pulsed Drain Current | 30 A |
| Single Pulsed Avalanche Energy | 121 mJ |
| Power Dissipation (Tc=25°C) | 56 W |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 2.2 °C/W Max |
| Gate Charge (Typical) | 12 nC |
The maximum drain-to-source voltage rating is 200 V.