This document describes the features and characteristics of FDC8878 N-Channel PowerTrench® MOSFET, including maximum on-resistance, fast switching speed, etc.
This document is a technical datasheet for the Fairchild Semiconductor FDC8878 N-Channel PowerTrench MOSFET. The device utilizes advanced Power Trench technology to achieve low on-resistance (rDS(on)) and high switching performance, making it suitable for primary switch applications in SuperSOT-6 packages.
The datasheet provides maximum ratings, electrical characteristics including breakdown voltage and threshold voltage, dynamic parameters such as gate charge and capacitance, and typical characteristic curves. It also includes dimensional outlines and a list of trademarks associated with the manufacturer.
| Drain to Source Voltage (VDS) | 30 V |
|---|---|
| Gate to Source Voltage (VGS) | ±20 V |
| Power Dissipation | 1.6 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Case) | 30 °C/W |
| Static Drain to Source On Resistance (VGS=10V) | Max 16 mΩ |
| Package Type | SSOT-6 |
The maximum rDS(on) is 16 mΩ at VGS = 10 V and ID = 8.0 A.
It is optimized for use as a Primary Switch in SuperSOT-6 applications.
Yes, the device is listed as RoHS Compliant in the features section.