FDC8601 is a N-Channel Power Trench® MOSFET produced by Fairchild Semiconductor, which has extremely low rDS(on), high power and current handling capability, and is widely used in load switch, synchronous rectifier and primary switch MOSFET circuits.
This document is a technical datasheet for the Fairchild Semiconductor FDC8601, an N-Channel Power Trench MOSFET designed with advanced process technology for high performance and ruggedness. The device features a maximum drain current of 2.7A and operates at voltages up to 100V.
| Drain to Source Voltage | 100 V |
|---|---|
| Gate to Source Voltage | +20 V |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | SuperSOT-6 |
The device is suitable for use as a Load Switch, Synchronous Rectifier, or Primary Switch.
Yes, the device is RoHS Compliant.