This document describes the features and characteristics of the FDD10AN06A0 N-Channel PowerTrench MOSFET, including its resistance, charge, and voltage rating.
This document is a datasheet for the Fairchild Semiconductor FDD10AN06A0 N-Channel PowerTrench MOSFET. The device is rated for 60V drain-to-source voltage, 50A continuous drain current, and a typical on-resistance of 10.5mOhm. It is designed for automotive applications and is qualified to AEC Q101 standards.
The datasheet provides maximum ratings, electrical characteristics, and typical characteristics including graphs for power dissipation, safe operating area, and switching times. It includes test circuits and waveforms for unclamped inductive switching, gate charge, and switching time measurements. Thermal resistance calculations and equations for determining junction temperature based on mounting pad area are also provided.
| Drain to Source Voltage | 60 V |
|---|---|
| Gate to Source Voltage | 420 V |
| Continuous Drain Current | 50 A |
| Power Dissipation | 135 W |
| Operating and Storage Temperature | -55 to 175 C |
| Thermal Resistance Junction to Case | 1.44 C/W |
| Turn-On Time | 131 ns |
The device is available in the TO-252AA package.
The maximum power dissipation is 135 W.