FDD2572 / FDU2572 is an N-channel PowerTrench® MOSFET power field-effect transistor with a voltage of 150V, a current of 29A, and an on-resistance of 54mΩ. It features low Miller charge, low QRR body diode, UIS capability, and compliance with AEC Q101 standards.
This document is a datasheet for the Fairchild Semiconductor FDD2572 and FDU2572 N-Channel PowerTrench MOSFETs. The devices are rated for 150V drain-to-source voltage and 29A continuous drain current at 25°C. They are designed for applications including DC/DC converters, off-line UPS systems, and automotive load control, featuring low on-resistance and low Miller charge.
| Drain to Source Voltage | 150 V |
|---|---|
| Gate to Source Voltage | 420 V |
| Continuous Drain Current (25°C) | 29 A |
| Continuous Drain Current (100°C) | 20 A |
| Power Dissipation | 135 W |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case (TO-251, TO-252) | 1.44 °C/W |
| Thermal Resistance Junction to Ambient (TO-251, TO-252) | 100 °C/W |
| Drain to Source On Resistance (Typ) | 54 mΩ |
The maximum rated junction temperature is 175°C.
The typical total gate charge is 26 nC.