This document describes the features and characteristics of the FDD050N03B N-Channel PowerTrench® MOSFET, including low on-state resistance, fast switching speed, low gate charge, high power and current handling capability, etc.
The document is a technical datasheet for the Fairchild Semiconductor FDD050N03B N-Channel PowerTrench MOSFET. It highlights key features such as a typical on-resistance of 3.7mΩ, fast switching speed, and RoHS compliance. The device utilizes advanced trench technology to minimize on-state resistance while maintaining superior performance. This manual is written in Chinese.
| Drain to Source Voltage (VDSS) | 30 V |
|---|---|
| Continuous Drain Current (ID) at TC = 25°C | 90 A |
| Continuous Drain Current (ID) at TC = 100°C | 63 A |
| Typical On-Resistance (RDS(on)) at VGS=10V | 3.7 mΩ |
| Operating Temperature Range | -55 to +175°C |
| Thermal Resistance Junction-to-Case (RθJC) | 2.3 °C/W |
The typical on-resistance (RDS(on)) is 3.7 mΩ at VGS = 10V and ID = 25A.
It is designed for DC to DC Convertors and Synchronous Rectification.