The FDC8886 is a high performance N-channel power MOSFET from Fairchild Semiconductor with a maximum on-resistance of 23 mΩ and fast switching speed.
The document describes the Fairchild Semiconductor FDC8886, an N-Channel Power Trench MOSFET optimized for low on-resistance and switching performance. It is produced using advanced Power Trench technology and features RoHS compliance.
Key electrical characteristics include a maximum drain to source voltage of 30V, a continuous drain current of up to 6.5A at 25°C, and an operating junction temperature range from -55°C to +150°C. The device is available in the SuperSOT-6 package.
| Drain to Source Voltage (Vds) | 30 V |
|---|---|
| Continuous Drain Current (Ta = 25°C) | 6.5 A |
| Pulsed Drain Current | 25 A |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 30 °C/W |
| Package Type | SuperSOT-6 |
The maximum continuous drain current is 6.5 A when the temperature is 25°C.
The maximum power dissipation is 1.6 W when mounted on a 202 copper pad.
The operating and storage junction temperature range is from -55 to +150 °C.